All-in-one dry development for metal-containing photoresist

An apparatus for performing dry development, the apparatus comprising:

• a process chamber;
• a controller having at least one processor and a memory, wherein the controller is configured with instructions to perform the following operations:
• perform a thermal dry development in the process chamber on a semiconductor substrate comprising an EUV-sensitive photoresist film using a halogen-containing gas in a plasma free process;
• and
• perform a plasma dry development in the same process chamber on the semiconductor substrate by forming a plasma of at least one reactive gas that reacts chemically with the EUV-sensitive photoresist film to form one or more volatile byproducts.