Development strategy for high-absorbing metal-containing photoresists
AssigneeLam Research Corporation
InventorsChenghao Wu, Eric Calvin Hansen, Timothy William Weidman, Jason Philip Coyle, Raymond Nicholas Vrtis
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Abstract
The present disclosure relates to use of an acid for developing or treating a radiation-sensitive film including two or more elements having a high patterning radiation-absorption cross-section. The acid can be employed to form a pattern by a negative tone development process or to treat a developed pattern by further removing residual resist components.
Claims48
A method comprising:
- exposing a radiation-sensitive resist film to a patterning radiation source, thereby providing an exposed resist film having an exposed region and an unexposed region, wherein the resist film comprises two or more elements having a high patterning radiation-absorption cross-section;
- developing the exposed resist film by removing the unexposed region, thereby forming a pattern by a negative tone development process;
- and
- optionally treating the pattern,
- wherein the method comprises either:
- performing said developing in the presence of an acid, or
- performing said treating the pattern in the presence of an acid.
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Dependencies are inferred from the claim text.