Substrate processing apparatus and method
AssigneeASM IP Holding B.V.
InventorsIvo Raaijmakers, Daniele Piumi, Ivan Zyulkov, David Kurt de Roest, Michael Eugene Givens
Life of this patent
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Abstract
A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.
Claims20
A substrate processing method to create a sacrificial masking layer comprising:
- performing a selective atomic layer deposition (ALD) cycle, the selective ALD cycle comprising:
- providing a first precursor selected to react with a reacting portion and not react with a non-reacting portion in a reaction chamber, the reacting portion including one of a modified layer portion and an unmodified layer portion, the non-reacting portion including the other one of the modified layer portion and the unmodified layer portion, wherein the first precursor comprises a material selected from the group consisting of a metal, silicon (Si), and germanium (Ge);
- selectively growing at least a portion of the sacrificial masking layer on the reacting portion relative to the non-reacting portion by contacting the reacting portion and the non-reacting portion with the first precursor;
- and subsequently
- purging, by flowing a purge gas through the reaction chamber, an unreacted portion of the first precursor and/or reaction by-products from the reaction chamber to leave the non-reacting portion as an exposed portion of the modified layer portion and the unmodified layer portion.
A substrate processing method to create a sacrificial masking layer comprising:
- performing a selective atomic layer deposition (ALD) cycle, wherein the selective ALD cycle comprises:
- providing a precursor selected to react more with a reacting portion relative to a less-reacting portion in a reaction chamber, wherein the reacting portion includes one of a modified layer portion and an unmodified layer portion, and the less-reacting portion including the other of the modified layer portion and the unmodified layer portion, the modified layer portion comprising CHx groups, with x being an integer from 1 to 3, the unmodified layer portion including OH groups;
- selectively growing the sacrificial masking layer on the reacting portion relative to the less-reacting portion by contacting the reacting portion and the less-reacting portion with the precursor;
- and
- purging, by flowing a purge gas through the reaction chamber, an unreacted portion of the precursor and/or reaction by-products from the reaction chamber.
Dependencies are inferred from the claim text.