Method For Forming Resist Underlayer Film And Patterning Process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsNaoki KOBAYASHI, Kenta Ishiwata, Daisuke Kori, Toshiharu Yano
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsNaoki KOBAYASHI, Kenta Ishiwata, Daisuke Kori, Toshiharu Yano
Estimating the term…
The present invention provides a method for forming by plasma irradiation a resist underlayer film with excellent dry etching resistance and film thickness uniformity, the method including: (i) applying a composition containing (A) a polymer and (B) an organic solvent, and performing heat treatment; and (ii) forming a resist underlayer film by plasma irradiation, where the polymer (A) contains a constitutional unit of formula (1) and has a weight-average molecular weight of 2,500 to 20,000: where Ar1 and Ar2 represent a benzene ring or naphthalene ring, X represents a structure of formula (1A), Y represents an organic group, “k” represents 0 or 1, where “n1” represents 0 or 1, “n2” represents 1 or 2, R2 represents a hydrogen atom, an organic group, or a structure of formula (1B), R3 represents a hydrogen atom, an alkyl group, an aryl group, or a group of formula (1C), “n3” represents 0 to 2, where RA represents an organic group, RB represents a hydrogen atom or an organic group, and where R4 represents a hydrogen atom or hydrocarbon group.
A method for forming a resist underlayer film on a substrate, the method comprising the steps of:
Dependencies are inferred from the claim text.