Gan reliability built-in self test (bist) apparatus and method for qualifying dynamic on-state resistance degradation

A built-in self-test circuit for testing reliability of one or more transistors, comprising:

• a transistor test switch;
• a driver circuit coupled to a gate of the transistor test switch;
• an integrated chopper circuit coupled to the driver circuit and configured to generate a drive signal capable of driving the transistor test switch,
• wherein the transistor test switch is connected to a plurality of monitoring pads, wherein the plurality of monitoring pads are configured to measure a dynamic on-state resistance (Rdson) of the transistor test switch, wherein the dynamic on-state resistance (Rdson) is determined by:
• a first voltage probe configured to measure drain to source voltages of the transistor test switch, and
• a second voltage probe configured to measure a voltage drop across a load resistor, wherein the load resistor is connected to an inductor and capacitor (LC) filter.

A method for reliability testing one or more transistors, the method comprising:

• generating drive signals by an integrated driver circuit;
• driving gates of high and low side transistors by a high and low side drivers, respectively,
• wherein the high and low side transistors are connected to a plurality of monitoring pads and
• wherein the high and low side drivers receive the drive signals from the integrated driver circuit;
• and
• measuring dynamic on-state resistances (Rdson) of the high and low side transistors, wherein the dynamic on-state resistances (Rdson) of the high and low side transistors are determined by:
• a first voltage probe configured to measure drain to source voltages of the high and low side transistors, and
• a second voltage probe configured to measure a voltage drop across a load resistor, wherein the load resistor is connected to an inductor and capacitor (LC) filter.