SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

A manufacturing method of a SiC epitaxial wafer by which a SiC epitaxial film is grown on a main surface of a SiC single crystal substrate, comprising:

• a film deposition step of growing the SiC epitaxial film by a chemical vapor deposition method using a chemical vapor deposition apparatus which includes a wafer support base,
• the wafer support base having a wafer placement surface on which the SiC single crystal substrate is placed, and a wafer support part,
• the wafer support part having an annular wall surface standing upright to surround a circumference of the SiC single crystal substrate, and
• the height dimension of the annular wall surface is larger than a thickness dimension of the SiC single crystal substrate,
• wherein the film deposition step includes:
• a substrate placement step in which the SiC single crystal substrate is placed so that the main surface thereof is inclined with respect to the wafer placement surface, and a part of the SiC single crystal substrate is disposed outward of the annular wall surface of the wafer support part in a plan view;
• and
• an epitaxial growth step in which the entirety of the SiC single crystal substrate is accommodated inside the annular wall surface of the wafer support part before a temperature of the SiC single crystal substrate reaches an epitaxial growth temperature by rotating the wafer support base while raising the temperature of the SiC single crystal substrate, and a gas containing a source gas is supplied onto the SiC single crystal substrate from the outside of an outer circumferential end portion of the SiC single crystal substrate.