Substrate processing device, and method for manufacturing metal oxide semiconductor

A substrate processing apparatus comprising:

• a chamber;
• a substrate supporting unit disposed in the chamber;
• an injection unit disposed above the substrate supporting unit;
• a first source supply unit for supplying a first source gas;
• a second source supply unit for supplying a second source gas;
• a first supply line connecting the first source supply unit with the injection unit;
• a second supply line connecting the second source supply unit with the injection unit;
• a mixing unit installed in the first supply line so as to be disposed between the first source supply unit and the injection unit;
• a first connection line connecting the second supply line with at least one of the first supply line and the mixing unit;
• and
• a first path change unit installed at a first connection point at which the first connection line is connected with the second supply line,
• wherein the first path change unit changes a flow path of the second source gas so that the second source gas supplied from the second source supply unit is supplied to one selected from among the mixing unit and the injection unit.