Heavily doped semiconductor devices for power distribution
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsRajesh Katkar, Cyprian Emeka Uzoh, Belgacem Haba
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Abstract
A device including a first integrated device die and a semiconductor device. The first integrated device die can include a die insulating layer and a die conductive feature at least partially embedded in the die insulating layer. The semiconductor device can include a first insulating layer on the first surface, a device conductive feature at least partially embedded in the first insulating layer, and a first heavily doped semiconductor material electrically connected to the device conductive feature. The die conductive feature can be connected to power or ground through at least the first heavily doped semiconductor material.
Claims38
A semiconductor device, comprising:
- a first layer comprising a first heavily doped semiconductor material and a first insulating bonding layer;
- a second layer comprising a second heavily doped semiconductor material and a second insulating bonding layer;
- and
- a first via extending through the second layer and electrically connecting to the first heavily doped semiconductor material,
- wherein the first layer and the second layer are directly bonded to one another without an intervening adhesive.
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A bonded structure comprising:
- a first integrated device die comprising a front surface and a back surface, the first integrated device die including a die insulating layer and a die conductive feature at least partially embedded in the die insulating layer;
- and
- a semiconductor device having a first surface and a second surface opposite the first surface, the semiconductor device including a first insulating layer on the first surface, a device conductive feature at least partially embedded in the first insulating layer, and a first heavily doped semiconductor material electrically connected to the device conductive feature, the first insulating layer directly bonded to the die insulating layer without an intervening adhesive, and the die conductive feature directly bonded to the device conductive feature without an intervening adhesive,
- wherein the die conductive feature is connected to power or ground through at least the first heavily doped semiconductor material.
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A bonded structure comprising:
- a heavily doped semiconductor material having a first insulating bonding layer on a first surface of the heavily doped semiconductor material and first conductive features at least partially embedded in the first insulating bonding layer;
- and
- an electronic component having a second insulating bonding layer and second conductive features at least partially embedded in the second insulating bonding layer, the first insulating bonding layer directly bonded with the second insulating bonding layer without an intervening adhesive, the first conductive features directly bonded with the second conductive features without an intervening adhesive,
- wherein the heavily doped semiconductor material has a coefficient of thermal expansion (CTE) within 50% to 150% of a CTE of a device portion of the electronic component.
Dependencies are inferred from the claim text.