Nonvolatile memory

A memory system comprising a nonvolatile memory device;

• and a memory controller configured to control the nonvolatile memory device,
• wherein the nonvolatile memory device comprises:
• a memory block including a plurality of cell strings, each of the plurality of cell strings including a string selection transistor, a plurality of memory cells, and a ground selection transistor connected in series and disposed in a vertical direction between a plurality of bit-lines and a common source line;
• a page buffer circuit connected to the plurality of cell strings through the plurality of bit-lines;
• and
• a control circuit configured to control a read operation by
• latching a first sensing data and a second sensing data in the page buffer circuit by performing a first read operation on a selected word-line designated by an access address, among a plurality of word-lines of the memory block, based on a read voltage set;
• latching a third sensing data in the page buffer circuit by performing a second read operation on an aggressor word-line adjacent to the selected word-line, based on at least one group read voltage;
• selecting one of the first sensing data and the second sensing data as a hard decision data based on a program state of the third sensing data;
• and
• providing the hard decision data to the memory controller.

A method of controlling an operation of a nonvolatile memory device comprising a memory block including a plurality of cell strings, each of the plurality of cell strings including a string selection transistor, a plurality of memory cells, and a ground selection transistor connected in series and disposed in a vertical direction between a plurality of bit-lines and a common source line, the method comprising:

• latching a first sensing data and a second sensing data in a page buffer circuit by performing a first read operation on a selected word-line designated by an access address, from among a plurality of word-lines of the memory block, based on a read voltage set;
• latching a third sensing data in the page buffer circuit by performing a second read operation on an aggressor word-line adjacent to the selected word-line, based on at least one group read voltage;
• selecting one of the first sensing data and the second sensing data as a hard decision data based on a program state of the third sensing data;
• and
• generating a soft decision data by using the first sensing data and the second sensing data.