US 2025/0053311 A1 · WRITE AGGREGATION BASED ON NAND WEAR LEVEL

Abstract

Instead of using programmable block size aggregation, a lower multiple of page, and down to a page size aggregation is used. A bad block prediction unit in a controller is able to predict when a programmable block has a bad page. The bad block prediction unit can lower the aggregation size of a programmable block by monitoring the life cycle of the programmable block through bad block statistic collection. When the accumulation size passes a threshold, the bad block prediction unit lowers the aggregation size. The bad block prediction unit can also predict when to lower aggregation size based on the number of reconstructions. An aggregate size level is set at a page boundary, and once the number of reconstructions reaches that page boundary, the bad block prediction unit lowers the aggregation size to page aggregation. The bad block prediction unit is able to predict both life cycle threshold changes and reconstructions changes.

Claims20

Dependent claims

A data storage device, comprising:

a memory device;
and
a controller coupled to the memory device, wherein the controller is configured to:
aggregate first data for writing the first data to the memory device, wherein the aggregating first data is for a first aggregation size;
change the first aggregation size to a second aggregation size, wherein the first aggregation size is different than the second aggregation size;
and
aggregate second data for writing the second data to the memory device, wherein the aggregating second data is for the second aggregation size.

4 more elements

Dependencies are inferred from the claim text.

Write aggregation based on nand wear level

Life of this patent

Write aggregation based on nand wear level

Life of this patent

Abstract

Claims20