Memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsSehwan Park, Jinyoung Kim, Jisang Lee, Joonsuc Jang
Life of this patent
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AssigneeSamsung Electronics Co., Ltd.
InventorsSehwan Park, Jinyoung Kim, Jisang Lee, Joonsuc Jang
Estimating the term…
An example memory device includes a memory cell array, a page buffer including buffer units corresponding to a plurality of memory cells of a page, a control logic configured to control a first read operation such that first hard decision data based on a normal read level and first soft decision data based on an offset level with respect to a first page are stored in the page buffer. The control logic is configured to perform a control operation of outputting the first hard decision data to a memory controller after a second read operation with respect to a second page has started in response to a first command that requests read of the second page from the memory controller and outputting the first soft decision data to the memory controller while the second read operation is being performed in response to a second command from the memory controller.
A memory device comprising:
An operating method of a memory device, wherein the memory device comprises a page buffer, and the page buffer comprises a plurality of buffer units corresponding to a plurality of memory cells, the operating method comprising:
A memory system comprising:
Dependencies are inferred from the claim text.