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US 2025/0053092 A1Published application
Aqueous acid development or treatment of organometallic photoresist
AssigneeLam Research Corporation
InventorsNizan Kenane, Timothy William Weidman, Eric Calvin Hansen, Chenghao Wu, Kevin Li Gu, Benjamin Kam
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Abstract
The present disclosure relates to use of aqueous acid for developing or treating a radiation-sensitive film. The aqueous acid can be employed to form a pattern by a positive tone wet development process or to treat a developed pattern by further removing residual resist components.
Claims23
A method comprising:
- exposing a radiation-sensitive resist film to a patterning radiation source, thereby providing an exposed resist film having an exposed region and an unexposed region;
- and
- developing the exposed resist film by removing the exposed region with an aqueous acid, thereby forming a pattern by a positive tone wet development process.
(canceled)
A method comprising:
- exposing a radiation-sensitive resist film to a patterning radiation source, thereby providing an exposed resist film having an exposed region and an unexposed region;
- developing the exposed resist film by removing the unexposed region, thereby forming a pattern by a negative tone development process;
- and
- treating the pattern with an aqueous acid.
1 more element
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Dependencies are inferred from the claim text.