Development of hybrid organotin oxide photoresists
AssigneeLam Research Corporation
InventorsEric Calvin Hansen, Chenghao Wu, Timothy William Weidman
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a film formed with an organometallic precursor and an organic co-reactant, as well as methods for forming and employing such films. In particular embodiments, the films can be incubated after exposure to radiation, which can provide enhanced material differences between the exposed and unexposed regions. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.
Claims36
A method of employing a resist, the method comprising:
- providing an organometallic precursor in the presence of an organic co-reactant to a surface of a substrate to provide a resist film;
- patterning the resist film by exposure to patterned radiation, thereby providing an exposed film having radiation exposed areas and radiation unexposed areas;
- incubating the exposed film at a temperature of about 20-300° C., thereby providing an incubated film;
- and
- developing the incubated film, thereby removing the radiation exposed areas to provide a pattern within a positive tone resist film or removing the radiation unexposed areas to provide a pattern within a negative tone resist.
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
Dependencies are inferred from the claim text.