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US 2025/0053076 A1Published application
Extreme ultraviolet light reflective structure including nano-lattice and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBenny KU, Keith Kuang-Kuo KOAI, Wen-Hao CHENG
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Abstract
An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.
Claims20
A reflective structure, comprising:
- a substrate;
- and
- a first layer formed over the substrate comprising a material composition that alternates periodically along a first direction at a first pitch and alternates periodically along a second direction at a second pitch,
- wherein the first pitch and the second pitch are each between about 5 nm and about 50 nm.
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A reflective structure, comprising:
- a substrate having a curved upper surface;
- and
- a curved first layer formed over the substrate comprising a matrix arrangement of a first material and a second material,
- wherein the matrix arrangement comprises a pitch that is between about 10 nm and about 25 nm.
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A method of forming a reflective structure, comprising:
- forming a semiconductor material over a substrate;
- patterning the semiconductor material to form a plurality of cavities in the semiconductor material;
- and
- filling the plurality of cavities with one or more of silicon oxide, silicon nitride, SiON, SiOC, or SiOCN to form filled cavities,
- wherein the plurality of cavities are formed in a matrix arrangement characterized by a first pitch and a second pitch that are each between about 5 nm and about 50 nm.
2 more elements
Dependencies are inferred from the claim text.