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US 2025/0052676 A1Published application
Terahertz radiation detectors based on thin films of non-centrosymmetric layered topological semimetals
AssigneeWisconsin Alumni Research Foundation
InventorsJun Xiao, Ying Wang, Daniel Warren van der Weide
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Abstract
Terahertz (THz) radiation detectors based on the rectification of a THz signal via the non-linear Hall effect in thin films of non-centrosymmetric layered topological semimetals are provided. The THz detectors, which enable sensitive, broadband, and fast room-temperature terahertz radiation detection, can be fabricated with electrostatic gates to tune the terahertz rectification.
Claims20
A terahertz radiation detector comprising:
- a film of layered topological semimetal having non-centrosymmetric crystal symmetry;
- a first electrically conductive terminal in contact with the film of layered topological semimetal;
- a second electrically conductive terminal in contact with the film of layered topological semimetal;
- at least one gate on a bottom surface or on a top surface of the layered topological semimetal, the at least one gate comprising a gate dielectric in contact with the layered topological semimetal and a gate electrode on the gate dielectric;
- a voltage source connected to the gate and configured to apply a gate voltage to the film of layered topological semimetal;
- and
- a current detector connected to the first and second electrically conductive terminals and configured to measure a transverse direct current through the film of layered topological semimetal.
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A method for detecting terahertz radiation using a terahertz detector comprising:
- a film of layered topological semimetal having non-centrosymmetric crystal symmetry;
- a first electrically conductive terminal in contact with the film of layered topological semimetal;
- a second electrically conductive terminal in contact with the film of layered topological semimetal;
- at least one gate on a bottom surface or on a top surface of the layered topological semimetal, the at least one gate comprising a gate dielectric in contact with the layered topological semimetal and a gate electrode on the gate dielectric;
- a voltage source connected to the gate and configured to apply a gate voltage to the film of layered topological semimetal;
- and
- a current detector connected to the first and second electrically conductive terminals and configured to measure a transverse direct current through the film of layered topological semimetal,
- the method comprising:
- exposing the film of topological semimetal to terahertz radiation, whereby the terahertz radiation produces a transverse direct current in the film of topological semimetal via the non-linear Hall effect;
- and
- measuring the transverse direct current using the current detector.
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Dependencies are inferred from the claim text.