Epitaxial wafer manufacturing method and epitaxial wafer manufacturing apparatus
AssigneeSumco Corporation
InventorsMasayuki TSUJI, Kazuhiro NARAHARA
Life of this patent
Estimating the term…
Abstract
A manufacturing method of epitaxial wafers is provided, where an epitaxial wafer manufacturing process including loading a wafer into a chamber of an epitaxial wafer manufacturing apparatus, growing an epitaxial film on the wafer to manufacture an epitaxial wafer, and unloading the epitaxial wafer to an outside of the chamber, is performed for a plurality of times and, subsequently, an interior of the chamber is cleaned. While the epitaxial film is grown, the wafer supported by the susceptor is heated by a first heater and an outer rim portion of the susceptor is heated by a second heater.
Claims10
A manufacturing method of epitaxial wafers, the method comprising:
- performing an epitaxial wafer manufacturing process comprising loading a wafer into a chamber of an epitaxial wafer manufacturing apparatus, growing an epitaxial film on the wafer to manufacture an epitaxial wafer, and unloading the epitaxial wafer to an outside of the chamber;
- repeating the epitaxial wafer manufacturing process for a plurality of times;
- and
- subsequently, cleaning an interior of the chamber, wherein
- the wafer supported by a susceptor is heated by a first heater and an outer rim portion of the susceptor is heated by a second heater while the epitaxial film is grown.
A manufacturing method of epitaxial wafers, the method comprising:
- performing an epitaxial wafer manufacturing process comprising loading a wafer into a chamber of an epitaxial wafer manufacturing apparatus, growing an epitaxial film on the wafer to manufacture an epitaxial wafer, and unloading the epitaxial wafer to an outside of the chamber;
- repeating the epitaxial wafer manufacturing process for a plurality of times;
- and
- subsequently, cleaning an interior of the chamber, wherein
- the wafer supported by a susceptor is heated by a first heater, a temperature of an outer peripheral portion of the wafer or an outer rim portion of the susceptor is measured, and the outer peripheral portion of the wafer is heated by a second heater based on the measured temperature while the epitaxial film is grown.
An epitaxial wafer manufacturing apparatus comprising:
- a first heater configured to heat a wafer supported by a susceptor;
- a temperature sensor configured to measure a temperature of an outer peripheral portion of the wafer or an outer rim portion of the susceptor;
- a second heater configured to heat the outer rim portion of the susceptor;
- and
- a controller configured to control the second heater based on the temperature.
An epitaxial wafer manufacturing apparatus comprising:
- a first heater configured to heat a wafer supported by a susceptor;
- a temperature sensor configured to measure a temperature of an outer peripheral portion of the wafer or an outer rim portion of the susceptor;
- a second heater configured to heat the outer peripheral portion of the wafer;
- and
- a controller configured to control the second heater based on the temperature.
Dependencies are inferred from the claim text.