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AssigneeBASF SE
InventorsCharlotte EMNET, Lucas Benjamin HENDERSON, Alexander FLUEGEL, Sathana KITAYAPORN, Nadine ENGELHARDT
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Described herein is a composition for depositing copper on a semiconductor substrate, the composition including (a) copper ions; (b) a grain refiner of formula G1a or G1b or salts thereof; (c) a complexing agent; and (d) optionally a buffer or a base to adjust the pH to a pH of from 7 to 13; wherein RG1 is selected from one or more H, C1 to C4 carboxyl, C1 to C4 alkyl, C1 to C6 alkoxy, halogen, and CN; RG2 is selected from one or more H, C1 to C4 carboxyl, C1 to C4 alkyl, C1 to C6 alkoxy, halogen, and CN; and XG1 is selected from C1 to 6 alkanediyl or a group —XG11—C(O)—O—XG12—; XG11 is selected from a chemical bond or C1 to C4 alkandiyl; XG12 is selected from a chemical bond or C1 to C4 alkandiyl; and wherein RG1 or RG2, comprises at least one C1 to C4 carboxyl group, or group XG1 is —XG11—C(O)—O—)—XG12—; wherein the pH of the composition is from 7 to 13.
A composition for depositing copper on a semiconductor substrate, the composition consisting essentially of:
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A method of using a composition, the method comprising using the composition for depositing copper on a semiconductor substrate comprising recessed features having an aperture size 50 nanometers or less,
A process for depositing copper on a semiconductor substrate comprising a recessed feature having an aperture size of 50 nm or less, preferably 15 nm or less, the recessed feature comprising a metal seed, the process comprising
Dependencies are inferred from the claim text.