Film deposition systems and methods
AssigneeASM IP Holding B.V.
InventorsAmir Kajbafvala, Yanfu Lu, Caleb Miskin
Life of this patent
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Abstract
A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.
Claims20
A semiconductor processing system, comprising:
- a reaction chamber configured to support a substrate;
- a first silicon precursor source connected to the reaction chamber;
- a germanium precursor source connected to the reaction chamber;
- and
- a controller operably connected to the first silicon precursor source and the germanium precursor source, wherein the controller is responsive to instructions recorded on a memory to:
- flow a first silicon precursor from the first silicon precursor source and a germanium precursor from the germanium precursor source into the reaction chamber, and
- continuously increase concentration of the germanium precursor within the reaction chamber throughout the step of flowing the first silicon precursor and the germanium precursor according to a non-linear function.
A semiconductor processing system, comprising:
- a reaction chamber configured to support a substrate;
- a first silicon precursor source connected to the reaction chamber;
- a second silicon precursor source connected to the reaction chamber;
- a germanium precursor source connected to the reaction chamber;
- and
- a controller operably connected to the first silicon precursor source, the second silicon precursor source, and the germanium precursor source, wherein the controller is responsive to instructions recorded on a memory to:
- flow a first silicon precursor from the first silicon precursor source and a germanium precursor from the germanium precursor source into the reaction chamber,
- continuously increase concentration of the germanium precursor within the reaction chamber throughout the step of flowing the first silicon precursor and the germanium precursor, and
- after flowing the first silicon precursor and the germanium precursor, flow a second silicon precursor from the second silicon precursor source into the reaction chamber.
Dependencies are inferred from the claim text.