A chemical vapor deposition method using an organomanganese compound as a starting material
AssigneeTanaka Kikinzoku Kogyo K.K.
InventorsRyosuke HARADA, Tomohiro Tsugawa, Toshiyuki Shigetomi, Seung-Joon Lee, Ketan Baban Katkar
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Abstract
A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.
Claims6
A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, comprising:
- an organomanganese compound represented by the following Chemical Formula 1 in which a cyclopentadienyl ligand (L1) and an isocyanide ligand (L2) are coordinated to manganese,
- wherein substituents R1 to R5 of the cyclopentadienyl ligand (L1) each are hydrogen, or a linear, branched or cyclic alkyl group having a carbon number of 1 or more and 4 or less, and a substituent R6 of the isocyanide ligand (L2) is a linear, branched or cyclic alkyl group having a carbon number of 1 or more and 4 or less.
Dependencies are inferred from the claim text.