Large grain tungsten growth in features
AssigneeLam Research Corporation
InventorsKevin Qiwen CHEN, Yu PAN, Chan Myae Myae SOE, Esther JENG, Juwen GAO
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Abstract
Methods of filling a feature with large grain tungsten include deposition of a tungsten carbon nitride (WCN) or tungsten nitride (WN) film that lines the feature. The WCN or WN film may be treated. It provides a template for subsequent growth of large grain tungsten. The top of the feature is treated with nitrogen to inhibit nucleation, facilitating bottom-up growth. In some embodiments, single grain tungsten is grown from the bottom up. Methods of at least partially filling a feature with single grain tungsten include treatment of the feature. In some embodiments, single grain tungsten is grown without a liner layer in the feature.
Claims21
A method comprising:
- providing a substrate comprising a patterned structure, the patterned structure including a feature having a feature bottom and dielectric sidewalls, the feature having an exposed metal surface at the feature bottom,
- exposing the metal surface and dielectric sidewalls to a hydrogen-based plasma treatment;
- and
- at least partially filling feature with tungsten, wherein the tungsten is single-grain tungsten.
The method of claim S, further comprising depositing a metal layer on the conformal adhesion layer to complete fill of the feature.
A method comprising:
- providing a substrate comprising a feature having a feature top, a feature bottom and feature sidewalls;
- performing multiple cycles of an atomic layer deposition (ALD) process to deposit a tungsten carbon nitride (WCN) film to line the feature sidewalls;
- exposing the WCN film to a hydrogen-based plasma treatment;
- depositing a conformal tungsten (W) nucleation layer on the WCN film;
- selectively inhibiting deposition on the conformal tungsten nucleation layer near the feature top relative to the feature bottom;
- and
- filling feature with tungsten, wherein the tungsten is single-grain tungsten.
A method comprising:
- providing a substrate comprising a feature having a feature top, a feature bottom and feature sidewalls;
- performing multiple cycles of an atomic layer deposition (ALD) process to deposit a tungsten carbon nitride (WN) film to line the feature sidewalls;
- exposing the WN film to a hydrogen-based plasma treatment;
- depositing a conformal tungsten (W) nucleation layer on the WN film;
- selectively inhibiting deposition on the conformal tungsten nucleation layer near the feature top relative to the feature bottom;
- and
- filling feature with tungsten, wherein the tungsten is single-grain tungsten.
Dependencies are inferred from the claim text.