Method for Producing a Substoichiometric Layer of Titanium, Vanadium, Tungsten or Molybdenum Oxide

Abstract

The present invention relates to a method for producing a substoichiometric oxygen layer from titanium, vanadium, tungsten or molybdenum oxide on a substrate by magnetron sputtering a target in a chamber, the method being characterised in that the target consists of titanium, vanadium, tungsten or molybdenum oxide and in that it comprises the steps of: a) creating a vacuum in the chamber and adding an inert gas to same; b) simultaneously applying a first radiofrequency potential to the target and a second radiofrequency potential to the substrate so as to generate, in the chamber, a plasma that is suitable for simultaneously i) sputtering the target to deposit a layer of the titanium, vanadium, tungsten or molybdenum oxide on the substrate; and ii) sputtering the layer of titanium, vanadium, tungsten or molybdenum oxide deposited on the substrate to remove oxygen atoms from the layer.

Dependencies are inferred from the claim text.