Methods of forming conformal transition metal dichalcogenide films
AssigneeApplied Materials, Inc.
InventorsChandan Das, Bencherki Mebarki, Jiecong Tang, Mohammed Mahdi Tavakoli, John Sudijono, Joung Joo Lee
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Abstract
Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.
Claims20
A method of forming a transition metal dichalcogenide film, the method comprising:
- depositing a transition metal oxide film on a semiconductor substrate surface by sequentially exposing the semiconductor substrate surface to a transition metal precursor and an oxidant, the oxidant comprising one or more of an alcohol or deionized/deoxygenated water;
- and
- converting the transition metal oxide film to the transition metal dichalcogenide film.
A method of forming a transition metal dichalcogenide film on a semiconductor substrate surface comprising at least one feature, the method comprising:
- sequentially exposing the semiconductor substrate surface to a transition metal precursor and an oxidant to directly deposit a transition metal oxide film without forming a transition metal film intermediate, the transition metal precursor comprising one or more of bis(t-butylimino) bis(dimethylamino) tungsten(VI), bis(isopropylcyclopentadienyl) tungsten(IV) dihydride, bis(cyclopentadienyl) tungsten dihydride, bis(t-butylimino) bis(dimethylamino) molybdenum(VI), pentakis (dimethylamino) tantalum (V), or tetrakis (dimethylamido) titanium (IV) and the oxidant comprising one or more of an alcohol or deionized/deoxygenated water;
- and
- exposing the transition metal oxide film to a chalcogenide precursor to convert the transition metal oxide film to the transition metal dichalcogenide film,
- wherein the semiconductor substrate surface is maintained at a temperature in a range of about 150° C. to about 450° C. and converting the transition metal oxide film is performed at a pressure in a range of from 0.1 Torr to 100 Torr.
Dependencies are inferred from the claim text.