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US 2025/0051378 A1Published application
Alkyl And Aryl Heteroleptic Bismuth Precursors For Bismuth Oxide Containing Thin Films
AssigneeVersum Materials US, LLC
InventorsSergei V. Ivanov, Michael T. Savo, Jason P. Coyle
Life of this patent
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Abstract
The disclosed and claimed subject matter relates to bismuth precursors of the formula Bi(Ra)x(Ar)3-x where x=1 or 2 and the use thereof as precursors for deposition of metal-containing films.
Claims33
A precursor of the formula Bi(Ra)x(Ar)3-x wherein
- (i) x=1 or 2,
- (ii) each Ra is independently one of an unsubstituted linear C1-C6 alkyl group, a linear C1-C6 alkyl group substituted with one or more halogen, a linear C1-C6 alkyl group substituted with an amino group, an unsubstituted branched C3-C6 alkyl group, a branched C3-C6 alkyl group substituted with one or more halogen, a branched C3-C6 alkyl group substituted with an amino group, an unsubstituted amine, a substituted amine, and —Si(CH3)3 and
- (iii) each Ar is independently one of a C3-C8 unsubstituted aromatic group, a C3-C8 aromatic group substituted with one or more halogen, a C3-C8 aromatic group substituted with an amino group, a 5-member heterocyclic ring and 6-member heterocyclic ring;
- and
- (iv) the precursor does not include:
2 more elements
3-19. (canceled)
21-26. (canceled)
28-46. (canceled)
48-54. (canceled)
(canceled)
60-67. (canceled)
A method for forming a bismuth-containing film on at least one surface of a substrate comprising:
- a. providing the substrate with the at least one surface in a reaction vessel;
- b. forming a bismuth-containing film on the at least one surface by an atomic layer deposition (ALD) process using one or more heteroleptic bismuth precursor of formula Bi(Ra)x(Ar)3-x wherein
- (i) x=1 or 2,
- (ii) each Ra is independently one of an unsubstituted linear C1-C6 alkyl group, a linear C1-C6 alkyl group substituted with one or more halogen, a linear C1-C6 alkyl group substituted with an amino group, an unsubstituted branched C3-C6 alkyl group, a branched C3-C6 alkyl group substituted with one or more halogen, a branched C3-C6 alkyl group substituted with an amino group, an unsubstituted amine, a substituted amine, and —Si(CH3)3 and
- (iii) each Ar is independently one of a C3-C8 unsubstituted aromatic group, a C3-C8 aromatic group substituted with one or more halogen, a C3-C8 aromatic group substituted with an amino group, a 5-member heterocyclic ring and 6-member heterocyclic ring.
2 more elements
(canceled)
79-82. (canceled)
86-89. (canceled)
91-107. (canceled)
Dependencies are inferred from the claim text.