Display device

A display device comprising:

• a base substrate;
• and
• a thin film transistor layer provided on the base substrate, the thin film transistor layer including a first semiconductor film made of polysilicon, a first inorganic insulating film, a first metal film, a second metal film, a second inorganic insulating film, a second semiconductor film made of an oxide semiconductor, a third inorganic insulating film, and a third metal film sequentially layered,
• wherein the thin film transistor layer is provided with a first thin film transistor including a first semiconductor layer formed of the first semiconductor film and a second thin film transistor including a second semiconductor layer formed of the second semiconductor film for each subpixel constituting a display region,
• the first thin film transistor includes the first semiconductor layer including a first conductor region and a second conductor region defined to be separated from each other and a first channel region defined between the first conductor region and the second conductor region, and a first gate electrode provided on the first semiconductor layer via the first inorganic insulating film and formed of a layered film of the first metal film and the second metal film,
• the second thin film transistor includes the second semiconductor layer including a third conductor region and a fourth conductor region defined to be separated from each other and a second channel region defined between the third conductor region and the fourth conductor region, and a second gate electrode provided on the second semiconductor layer via the third inorganic insulating film and formed of the third metal film,
• the first gate electrode includes a thick film electrode portion formed of a thicker one of the first metal film and the second metal film, and a thin film electrode portion formed of a thinner one of the first metal film and the second metal film in such a manner as to overlap the thick film electrode portion and protrude from the thick film electrode portion toward at least one side in a channel length direction,
• the first semiconductor layer is provided with a low-concentration impurity region having an impurity concentration lower than an impurity concentration of each of the first conductor region and the second conductor region in such a manner as to overlap a portion of the thin film electrode portion protruding from the thick film electrode portion, and
• a lower conductive layer formed of a thinner one of the first metal film and the second metal film is provided on the base substrate side of the second semiconductor layer in such a manner as to overlap the second channel region.