Semiconductor Laser

Abstract

A semiconductor laser includes: a waveguide structure including, in order, a first semiconductor layer, an active layer, and a second semiconductor layer; a p-type semiconductor layer disposed in contact with one side surface of the active layer; an n-type semiconductor layer disposed in contact with the other side surface of the active layer; a waveguide layer optically coupled to the active layer in a waveguide direction; a first diffraction grating disposed on either one of a lower surface of the first semiconductor layer, an upper surface of the second semiconductor layer, and a side surface of the active layer; a second diffraction grating disposed on either one of a lower surface and an upper surface of the waveguide layer; and a refractive index control unit for changing a refractive index of the waveguide layer. The semiconductor laser can achieve a good high-temperature operation with a simple configuration.

Dependencies are inferred from the claim text.