Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsNobuhito SHIRAISHI, Yorinobu KUNIMUNE, Yoshimi KATO, Nozomi ITO, Mengnan YANG, Kenichiro SONODA
Life of this patent
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Abstract
A semiconductor device includes a first dielectric film, a resistor element disposed on the first dielectric film, and a second dielectric film disposed on the resistor element. The resistor element contains silicon, chromium, and carbon. The silicon concentration in the resistor element increases from a center part of the resistor element towards an upper surface of the resistor element, and also increases from the center part of the resistor element towards a lower surface of the resistor element.
Claims20
A semiconductor device comprising:
- a first dielectric film;
- a resistor element disposed on the first dielectric film, the resistor element containing silicon, chromium, and carbon;
- and
- a second dielectric film disposed on the resistor element so as to contact the resistor element,
- wherein a silicon concentration of the resistor element increases from a center part of the resistor element towards an upper surface of the resistor element, and increases from the center part of the resistor element towards a lower surface of the resistor element.
A method of manufacturing a semiconductor device, the method comprising:
- (a) forming a first dielectric film;
- (b) forming a resistor element on the first dielectric film, the resistor element containing silicon, chromium, and carbon;
- (c) forming a second dielectric film on the first dielectric film so as to cover the resistor element and contact the resistor element;
- and
- (d) after the (c), performing an annealing treatment on the resistor element in a state where the second dielectric film is disposed on the resistor element,
- wherein a silicon concentration of the resistor element after the (d) increases from a center part of the resistor element towards an upper surface of the resistor element, and increases from the center part of the resistor element towards a lower surface of the resistor element.
A method of manufacturing a semiconductor device, the method comprising:
- (a) forming a first dielectric film;
- (b) forming a first film on the first dielectric film, the first film containing silicon, chromium, and carbon;
- (c) forming a second dielectric film on the first film so as to contact the first film;
- (d) after the (c), patterning the second dielectric film and the first film to form a resistor element from the patterned first film;
- and
- (e) after the (c), performing an annealing treatment on the first film or on the resistor element in a state where the second dielectric film is disposed on the first film or on the resistor element,
- wherein a silicon concentration of the resistor element after the (c) increases from a center part of the resistor element towards an upper surface of the resistor element, and increases from the center part of the resistor element towards a lower surface of the resistor element.
Dependencies are inferred from the claim text.