Silicon-containing resist underlayer film forming composition

Abstract

A silicon-containing resist underlayer film forming composition for forming a resist underlayer film which is able to be removed not only by a conventional dry etching method but also by a wet etching method that uses a chemical agent, and which has excellent lithography characteristics, while enabling the achievement of a high etching rate during wet etching. A silicon-containing resist underlayer film forming composition which contains (A) a polysiloxane, (B) nitric acid, (C) a bisphenol compound and (D) a solvent.

Dependencies are inferred from the claim text.