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US 2025/0044689 A1Published application
Monomer, polymer, chemically amplified negative resist composition, and resist pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorMasahiro Fukushima
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Abstract
A chemically amplified negative resist composition comprising a polymer comprising repeat units derived from a monomer having a specific hydrating functional group is provided. The chemically amplified negative tone resist composition exhibits a high resolution during pattern formation and forms a pattern having a low LER, pattern fidelity and improved dose margin; and a resist pattern forming process using the resist composition.
Claims19
A monomer having the formula (A1):
- wherein a1 is 1 or 2, a2 is 0, 1 or 2,
- RA is hydrogen, fluorine, methyl or trifluoromethyl,
- R1 is halogen or a C1-C20 hydrocarbyl group which may contain a heteroatom,
- R2 and R3 are each independently hydrogen, a C1-C15 saturated hydrocarbyl group or C6-C15 aryl group, the hydrocarbyl group may be substituted with a hydroxy or C1-C6 saturated hydrocarbyloxy moiety, the aryl group may have a substituent, excluding that R2 and R3 are hydrogen at the same time, R2 and R3 may bond together to form a ring with the carbon atom to which they are attached, some —CH2— in the ring may be replaced by —O— or —S—, and
- W1 is hydrogen, a C1-C10 aliphatic hydrocarbyl group, C2-C10 aliphatic hydrocarbylcarbonyl group or optionally substituted C6-C15 aryl group.
2 more elements
Dependencies are inferred from the claim text.