Superconducting device
AssigneeTeknologian tutkimuskeskus VTT Oy
InventorsJanne Lehtinen, Joonas Govenius, Jukka-Pekka Kaikkonen
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Abstract
According to an example aspect of the present invention, there is provided a method of producing electrodes for superconducting components of quantum computers, quantum sensors or quantum communication devices comprising depositing a first layer on a silicon substrate, the first layer being of a first metal, the first metal being a superconductor, depositing a second layer on the first layer, the second layer being of a second metal, the second metal being a superconductor, and plasma etching through the second layer using a mask layer disposed on the second layer to partially expose the first layer.
Claims19
A method of producing electrodes for superconducting components of quantum computers, quantum sensors or quantum communication devices comprising:
- depositing a first layer on a silicon substrate, the first layer being of a first metal, the first metal being a superconductor;
- depositing a second layer on the first layer, the second layer being of a second metal, the second metal being a superconductor, and
- plasma etching through the second layer using a mask layer disposed on the second layer to partially expose the first layer, wherein the silicon substrate comprises high resistivity silicon, and the plasma etching using the mask layer does not penetrate the first layer.
A method of producing electrodes for superconducting components of quantum computers, quantum sensors or quantum communication devices comprising:
- providing a dielectric layer comprised of a dielectric substance on a silicon substrate;
- patterning the dielectric layer using wet etching;
- depositing a metal layer on the silicon substrate, leaving the patterned dielectric layer between the metal layer and the silicon substrate, and
- plasma etching through the metal layer using a mask layer disposed on the metal layer to at least partially expose the dielectric layer, wherein the silicon substrate comprises high resistivity silicon.
A method of producing electrodes for superconducting components of quantum computers, quantum sensors or quantum communication devices comprising:
- providing a dielectric layer comprised of a dielectric substance on a silicon substrate;
- patterning the dielectric layer using wet etching;
- depositing a metal layer on the silicon substrate, leaving the patterned dielectric layer between the metal layer and the silicon substrate, the metal being a superconductor, and
- planarizing the metal layer using chemical-mechanical polishing to obtain a planar metal layer with openings filled with the dielectric substance, wherein the silicon substrate comprises high resistivity silicon.
Dependencies are inferred from the claim text.