High sensitivity magnetic sensing matrix chip with two-dimensional electronic gas channel structure and the manufacturing process

A method for manufacturing a high sensitivity magnetic sensing matrix chip with a two-dimensional electronic gas channel structure comprising following steps:

• S1. cleaning a substrate:
• preparing a substrate material, cleaning the substrate, and removing contaminants on a surface of the substrate;
• S2. epitaxial growth:
• epitaxially growing a two-dimensional electron gas channel material heterojunction structure and a buffer layer by any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method, and a hydride vapor phase epitaxy method;
• S3. mesa etching:
• after photolithography and development, the epitaxially grown sample is etched by inductively coupled plasma etching;
• S4. shallow etching:
• the sample after mesa etching and isolation, after photolithography and development, are subjected to shallow etching by inductively coupled plasma etching to realize 2DEG contacting the mesa;
• S5. fabrication of electrodes by Ohmic contact:
• after photolithography and development, composite metal is deposited by electron beam evaporation system, and then an excellent ohmic contact is formed by using a rapid thermal annealing process;
• S6. gate groove etching:
• after the electrodes C1, C2, S1, S2, source S, and drain D are prepared, the gate groove etching is carried out by inductively coupled plasma etching method;
• S7. gate dielectric deposition:
• after the sample subjected by gate groove etching is subjected to gate-groove interface treatment using an alkaline solution with nitrogen element, the gate dielectric is deposited by any one of methods of metal-organic chemical vapor deposition, plasma chemical vapor deposition, atomic layer deposition, low pressure chemical vapor deposition, and magnetron sputtering;
• S8. fabrication of gate electrode:
• after photolithography and development, the composite metal is deposited by electron beam evaporation system, and the metal is stripped to form the gate electrode;
• S9. surface passivation:
• use any one of the methods of plasma enhanced chemical vapor deposition, magnetron sputtering, atomic layer deposition, and electron beam evaporation to deposit SiO2 for device passivation;
• S10. Electrodes windowing:
• photoetching and corroding the passivation layer at the electrode to form an electrode window;
• S11. fabrication of metal interconnection lines:
• after photolithography and development, using the electron beam evaporation system to deposit metal to form the metal interconnection lines;
• S12. wire bonding of electrodes:
• using any one of the methods of magnetron sputtering, electron beam evaporation, and thermal evaporation to deposit metal on the electrodes to make pads and wire bonding.