Method for manufacturing transistor, display device including the transistor, and method for manufacturing the display device
AssigneeSamsung Display Co., Ltd.
InventorsJONGOH SEO, DONGGYU JIN
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a transistor includes providing a preliminary polysilicon layer including an upper surface on which protrusions are formed, providing a sacrificial layer on the upper surface of the preliminary polysilicon layer, providing argon (Ar) ions in an upper portion of the sacrificial layer to dope the sacrificial layer and the preliminary polysilicon layer, providing an etchant to an upper portion of the doped sacrificial layer, and removing the sacrificial layer, and etching the protrusions to form a polysilicon layer.
Claims20
A method for manufacturing a transistor, the method comprising:
- providing a preliminary polysilicon layer including an upper surface on which protrusions are formed;
- providing a sacrificial layer on the upper surface of the preliminary polysilicon layer;
- providing argon (Ar) ions in an upper portion of the sacrificial layer to dope the sacrificial layer and the preliminary polysilicon layer;
- providing an etchant to an upper portion of the doped sacrificial layer;
- and
- removing the sacrificial layer, and etching the protrusions to form a polysilicon layer.
A display device, comprising:
- a base layer;
- a circuit layer disposed on the base layer, and including a transistor and insulation layers;
- and
- a display layer disposed on the circuit layer, and including a light emitting element electrically connected to the transistor,
- wherein the transistor includes a polysilicon layer including argon (Ar).
A method for manufacturing a display device, the method comprising:
- providing a base layer;
- forming, on the base layer, a circuit layer including transistors and insulation layers;
- and
- providing a display layer on the circuit layer,
- wherein the forming of the circuit layer includes:
- forming an amorphous silicon layer on the base layer;
- crystallizing the amorphous silicon layer into a preliminary polysilicon layer;
- providing a sacrificial layer on the preliminary polysilicon layer;
- doping the sacrificial layer and the preliminary polysilicon layer with argon;
- providing an etchant on the doped sacrificial layer and the doped preliminary polysilicon layer;
- and
- removing the sacrificial layer, and reducing a surface roughness of the preliminary polysilicon layer to form a polysilicon layer.
Dependencies are inferred from the claim text.