Photoelectric conversion element and imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorsKei FUKUHARA, Mika INABA
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Abstract
A photoelectric conversion element (10) according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode (16) disposed to be opposed to the first electrode (11); a photoelectric conversion layer (13) provided between the first electrode (11) and the second electrode (16); and a buffer layer (14) provided between the second electrode (16) and the photoelectric conversion layer (13) and having both hole transportability and electron transportability.
Claims18
A photoelectric conversion element comprising:
- a first electrode;
- a second electrode disposed to be opposed to the first electrode;
- a photoelectric conversion layer provided between the first electrode and the second electrode;
- and
- a buffer layer provided between the second electrode and the photoelectric conversion layer and having both hole transportability and electron transportability.
An imaging device comprising a plurality of pixels each being provided with an imaging element that includes one or a plurality of photoelectric conversion sections,
- the one or the plurality of photoelectric conversion sections including
- a first electrode,
- a second electrode disposed to be opposed to the first electrode,
- a photoelectric conversion layer provided between the first electrode and the second electrode, and
- a buffer layer provided between the second electrode and the photoelectric conversion layer and having both hole transportability and electron transportability.
Dependencies are inferred from the claim text.