Epitaxially grown converter layer, optoelectronic arrangement and method for producing the same

Abstract

In an embodiment an optoelectronic arrangement includes at least one vertical optoelectronic device with a first side and a second side, wherein at least parts of the second side form a main emission surface, and wherein the optoelectronic device is configured to emit light of a first wavelength from the main emission surface, an electrically conductive barrier structure at least partially surrounding the at least one vertical optoelectronic device and comprising sidewalls with a reflective surface, the reflective surface electrically isolated from sidewalls of the vertical optoelectronic device, a layer stack arranged on and bonded to the main emission surface and comprising a first epitaxially grown converter layer configured to convert the light of the first wavelength to light of a second wavelength and an optional conductive layer arranged on the main emission surface and electrically connecting a second contact with the electrically conductive barrier structure.

Dependencies are inferred from the claim text.