Optoelectronic component, optoelectronic device and method for manufacturing a component

An optoelectronic component with an epitaxial layer sequence comprising:

• a functional inner region comprising a first electrical contact and a second electrical contact opposite the first electrical contact, and semiconductor layers arranged between the first electrical contact and the second electrical contact being configured to generate light, wherein the semiconductor layers comprise a base area that increases towards the second electrical contact;
• a dielectric passivation layer on sidewalls of the semiconductor layers configured;
• and
• a mirror layer surrounding the passivation layer at a distance thereby forming a gap,
• wherein the second electrical contact and a plane of the gap surrounding the second electrical contact form a light-emitting surface,
• wherein the semiconductor layers comprise a first semiconductor layer having a first dopant type electrically connected to the first contact, a second semiconductor layer of a second doping type electrically connected to the second contact, and an active layer arranged between the first and second semiconductor layers, and
• wherein regions of the epitaxial layer sequence, on which the mirror layer is arranged, comprise at least one of the first semiconductor layer, the second semiconductor layer or the active layer.

A method for manufacturing an optoelectronic component, the method comprising:

• providing a growth substrate;
• forming an areal epitaxial layer sequence with an n-doped semiconductor layer, a p-doped semiconductor layer and an active layer arranged in between;
• structuring a first surface of the epitaxial layer sequence such that, in plan view of the first surface, a surface area accessible to a first etching process encloses an inner surface;
• conducting the first etching process and creating a mesa trench in the accessible surface area such that an inner region with inclined side flanks is created, wherein the mesa trench exposes at least the active layer of the epitaxial layer sequence;
• structuring a second surface of the epitaxial layer sequence opposite the first surface such that, in plan view of the second surface, areas remain accessible to a second etching process, which lie at least partially above the mesa trench;
• and
• conducting the second etching process such that a continuous gap is created around the inner region and the side flank of the epitaxial layer sequence opposite the inner region is at least partially inclined relative to a normal.