Nitride semiconductor light-emitting element
AssigneeNikkiso Co., Ltd.
InventorsKazufumi TAKAO, Yusuke MATSUKURA, Cyril PERNOT
Life of this patent
Estimating the term…
Abstract
A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, an electron blocking layer formed on the active layer, and a p-type semiconductor layer formed on the electron blocking layer. A plurality of pits are formed at least in the active layer. A ratio R=D2/D1, which is a ratio of a second density D2 to a first density D1, is less than 30%, where the first density D1 is a density of the pits on an upper surface of the active layer and the second density D2 is a density of the pits on an upper surface of the electron blocking layer.
Claims6
A nitride semiconductor light-emitting element, comprising:
- an n-type semiconductor layer,
- an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light;
- an electron blocking layer formed on the active layer;
- and
- a p-type semiconductor layer formed on the electron blocking layer,
- wherein a plurality of pits are formed at least in the active layer, and
- wherein a ratio R=D2/D1, which is a ratio of a second density D2 to a first density D1, is less than 30%, where the first density D1 is a density of the pits on an upper surface of the active layer and the second density D2 is a density of the pits on an upper surface of the electron blocking layer.
Dependencies are inferred from the claim text.