Ultraviolet light-emitting element and method of producing same

A method of producing an ultraviolet light-emitting element comprising:

• an n-type semiconductor layer formation step of forming an n-type semiconductor layer formed of AlxGa1-xN having an Al composition ratio x;
• a light-emitting layer formation step of forming a quantum well-type light-emitting layer;
• a p-type electron blocking layer formation step of forming a p-type electron blocking layer formed of AlyGa1-yN having an Al composition ratio y;
• a p-type cladding layer formation step of forming a p-type cladding layer formed of AlzGa1-zN having an Al composition ratio z;
• and
• a p-type GaN contact layer formation step of forming a p-type GaN contact layer, wherein
• the n-type semiconductor layer formation step, the light-emitting layer formation step, the p-type electron blocking layer formation step, the p-type cladding layer formation step, and the p-type GaN contact layer formation step are performed in stated order,
• the p-type electron blocking layer formation step:
• sets the Al composition ratio y as not less than 0.35 and not more than 0.45;
• and
• sets a thickness of the p-type electron blocking layer as not less than 11 nm and not more than 70 nm,
• the p-type electron blocking layer formation step and the p-type cladding layer formation step set a total thickness of the p-type electron blocking layer and the p-type cladding layer as not less than 73 nm and not more than 100 nm, and
• the p-type GaN contact layer formation step sets a thickness of the p-type GaN contact layer as not less than 5 nm and not more than 15 nm.