Light emitting element, manufacturing method therefor, and display device
AssigneeSamsung Display Co., Ltd.
InventorsDong Uk KIM, Se Young KIM, Hyung Rae CHA
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Abstract
A light emitting element includes a semiconductor core having at least a partial region extending in a direction and including a first end, a second end, and a main body part between the first end and the second end; a first electrode layer surrounding the second end of the semiconductor core; a second electrode layer surrounding at least the first end of the semiconductor core and spaced apart from the first electrode layer; and an insulating layer surrounding the semiconductor core, the first electrode layer and the second electrode layer. The second end of the semiconductor core has a diameter smaller than a diameter of the main body part.
Claims20
A light emitting element comprising:
- a first semiconductor layer including a first portion, a second portion and a third portion, the first portion being between the second portion and the third portion;
- an active layer surrounding the first portion of the first semiconductor layer;
- a second semiconductor layer surrounding the active layer and the second portion of the first semiconductor layer;
- and
- an insulating layer surrounding the second semiconductor layer and the third portion of the first semiconductor layer.
A display device comprising:
- a first electrode disposed on a substrate;
- a second electrode disposed on the substrate and spaced apart from the first electrode;
- and
- at least one light emitting element disposed between the first electrode and the second electrode, wherein
- the light emitting element includes:
- a first semiconductor layer including a first portion, a second portion and a third portion, the first portion being between the second portion and the third portion;
- an active layer surrounding the first portion of the first semiconductor layer;
- a second semiconductor layer surrounding the active layer and the second portion of the first semiconductor layer;
- and
- an insulating layer surrounding the second semiconductor layer and the third portion of the first semiconductor layer.
Dependencies are inferred from the claim text.