US 2025/0040291 A1Published application

Photodetector

OwnerDaigao CHEN, Xi XIAO +2inventors

InventorsDaigao CHEN, Xi XIAO, Min LIU, Peiqi ZHOU

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Abstract

A photodetector, comprising a flat slab structure (1), a waveguide structure (6), a light trapping structure (2), an absorption structure (3), a first electrode structure (4) and a second electrode structure (5), wherein the waveguide structure (6) extends into the light trapping structure (2), and a first edge where a first side wall of the waveguide structure (6) is located is tangent to a second edge where a second side wall in outer side walls of the light trapping structure (2) is located; the waveguide structure (6) is used for guiding incident light into the light trapping structure (2) in a direction tangent to the second edge; the guided light is trapped in the light trapping structure (2) by means of total internal reflection of the side walls of the light trapping structure (2) for annular transmission, and the guided light is coupled into the absorption structure (3) by means of the light trapping structure (2); the first electrode structure (4) is located in the light trapping structure (2); the first electrode structure (4) and the second electrode structure (5) are used for collecting electrons or holes transmitted along the absorption structure (3) and the light trapping structure (2); the types of current carriers collected by the first electrode structure (4) and the second electrode structure (5) are different.

Claims11

Dependent claims

A photodetector, comprising a slab structure, a waveguide structure, a light trapping structure, an absorption structure, a first electrode structure and a second electrode structure, wherein

the waveguide structure extends into the light trapping structure;
a first side, on which a first sidewall of the waveguide structure is positioned, is tangent to a second side, on which a second sidewall of outer sidewalls of the light trapping structure is positioned;
and the waveguide structure is configured to import incident light into the light trapping structure in a direction tangent to the second side;
the imported light is confined to travel annularly within the light trapping structure by total internal reflection of sidewalls of the light trapping structure, and the imported light is coupled into the absorption structure through the light trapping structure;
the absorption structure is at least partially positioned on the light trapping structure;
the coupled light is confined to travel annularly within the absorption structure by total internal reflection of sidewalls of the absorption structure, and the coupled light is converted into electrons and holes;
the slab structure surrounds the waveguide structure and the light trapping structure;
and
the first electrode structure is positioned inside the light trapping structure;
the second electrode structure is positioned outside the light trapping structure and is in contact with the light trapping structure;
the first electrode structure and the second electrode structure are configured to collect electrons or holes flowing via the absorption structure and the light trapping structure;
and the first electrode structure and the second electrode structure collect different types of carriers.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/716,534Filed 19 Jan 2022
Priority: CN 202111530137.414 Dec 2021
Published: 30 Jan 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10F 77/413
Optical elements or arrangements: directly associated or integrated with the devices, e.g. back reflectors
H10F 30/223
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PIN barrier
H10F 77/122
Active materials: comprising only Group IV materials
H10F 77/147
Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies: shapes of bodies