Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating dotted diffusion
AssigneeMaxeon Solar Pte. Ltd.
InventorsStaffan Westerberg, Gabriel Harley
Life of this patent
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Abstract
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.
Claims20
A method of fabricating a solar cell, the method comprising:
- forming a first dielectric layer on a back surface of a substrate, the substrate having a light-receiving surface opposite the back surface;
- forming a p-type silicon layer on the first dielectric layer;
- forming a second dielectric layer over a plurality of non-continuous regions at the back surface of the substrate;
- forming a plurality of isolated n-type silicon layer features on the second dielectric layer;
- forming a first conductive contact structure electrically connected to the p-type silicon layer;
- forming an insulator layer on the p-type silicon layer, wherein the first conductive contact structure is through the insulator layer, and wherein a portion of the plurality of isolated n-type silicon layer features overlaps the insulator layer but is separated from the first conductive contact structure;
- forming a second conductive contact structure electrically connected to the plurality of isolated n-type silicon layer features, wherein the second conductive contact structure is over the plurality of isolated n-type silicon layer features and a first portion of the insulator layer;
- and
- forming a third dielectric layer between the p-type silicon layer and at least one of the plurality of isolated n-type silicon layer features, the third dielectric layer having an uppermost surface co-planar with an uppermost surface of the p-type silicon layer.
A method of fabricating a solar cell, the method comprising:
- forming a first dielectric layer on a back surface of a substrate, the substrate having a light-receiving surface opposite the back surface;
- forming an n-type silicon layer on the first dielectric layer;
- forming a second dielectric layer over a plurality of non-continuous regions at the back surface of the substrate;
- forming a plurality of isolated p-type silicon layer features on the second dielectric layer;
- forming a first conductive contact structure electrically connected to the n-type silicon layer;
- forming an insulator layer on the n-type silicon layer, wherein the first conductive contact structure is through the insulator layer, and wherein a portion of the plurality of isolated p-type silicon layer features overlaps the insulator layer but is separated from the first conductive contact structure;
- forming a second conductive contact structure electrically connected to the plurality of isolated p-type silicon layer features, wherein the second conductive contact structure is over the plurality of isolated p-type silicon layer features and a first portion of the insulator layer;
- and
- forming a third dielectric layer between the n-type silicon layer and at least one of the plurality of isolated p-type silicon layer features, the third dielectric layer having an uppermost surface co-planar with an uppermost surface of the n-type silicon layer.
Dependencies are inferred from the claim text.