Monolithic Optical Transformer
AssigneeLumileds LLC
InventorsWouter Anthon Soer, Isaac Wildeson, Ronald Bonne
Life of this patent
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Abstract
Provided are optical transformer devices having a high power efficiency. The device architecture provides uniform current spreading to minimize efficiency droop. The quantum well designs are optimized for both light-emitting diode (LED) and photo diode (PD) operation. A low-loss optical cavity allows efficient transfer of light from the LED junction to the PD junction. The architecture provides a low-loss voltage up- and down-conversion and provides compatibility with production-grade epitaxial growth and wafer fabrication processes.
Claims21
-20. (canceled)
A monolithic optical device comprising:
- a light-emitting diode (LED) junction;
- a photo diode (PD) junction;
- and
- a semi-insulating layer separating the light-emitting diode (LED) junction and the photo diode (PD) junction,
- wherein the light-emitting diode (LED) junction, the photo diode (PD) junction, and the semi-insulating layer are stacked vertically.
A monolithic optical device comprising:
- a light-emitting diode (LED) junction;
- a photo diode (PD) junction;
- a tunnel junction, and
- a contact shared by the light-emitting diode (LED) junction and the photo diode (PD) junction,
- wherein the light-emitting diode (LED) junction, the photo diode (PD) junction, and the tunnel junction are stacked vertically.
A monolithic optical device comprising:
- a light-emitting diode (LED) junction;
- a first photo diode (PD) junction;
- a second photo diode (PD) junction;
- a tunnel junction separating the first photo diode (PD) junction and the second photo diode (PD) junction;
- and
- a semi-insulating layer separating the light-emitting diode (LED) junction and the first photo diode (PD) junction,
- wherein the light-emitting diode (LED) junction, the first photo diode (PD) junction, the second photo diode (PD) junction, the tunnel junction, and the semi-insulating layer are stacked vertically.
A monolithic optical device comprising:
- a junction segmented into a plurality of mesas on a common cathode, the junction comprising an n-type layer on the common cathode, an active region on the n-type layer, a p-type layer on the active region, and each of the plurality of mesas separated by a trench;
- and
- an anode on the p-type layer of each of the plurality of mesa, the anodes alternating between a photo diode (PD) anode and a light-emitting diode (LED) anode.
A monolithic optical device comprising:
- a junction segmented into a plurality of mesas on a plurality of alternating photo diode (PD) anode and light-emitting diode (LED) anode regions, the junction comprising a p-type layer on the plurality of alternating photo diode (PD) anode and light-emitting diode (LED) anode regions, an active region on the p-type layer, an n-type layer on the active region, and each of the plurality of mesas separated by a trench;
- and
- cathode on the n-type layer of each of the plurality of mesas, the cathodes alternating between a photo diode (PD) cathode and a light-emitting diode (LED) cathode.
Dependencies are inferred from the claim text.