Image sensors and methods of fabricating the same

A method of fabricating image sensor, comprising:

• forming a device layer including:
• a substrate region having a photoelectric conversion region and a floating diffusion region therein, said floating diffusion region configured to receive charges generated in the photoelectric conversion region;
• an upper insulating layer extending on the substrate region;
• and
• a first contact that penetrates the upper insulating layer and is electrically connected to the floating diffusion region;
• sequentially forming a first capping layer and a first interlayer insulating layer on the upper insulating layer;
• forming a first trench exposing the first contact by etching the first interlayer insulating layer and the first capping layer;
• forming a second interlayer insulating layer on the upper insulating layer;
• and
• forming a second trench by etching the second interlayer insulating layer;
• and
• wherein a first depth of the first trench is shallower than a second depth of the second trench, and the first trench and the second trench are formed at different heights relative to the substrate region.