Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorJuntaek LEE
Life of this patent
Estimating the term…
Abstract
An image sensor includes a plurality of pixels arranged in a matrix form, photodiodes for the respective pixels, the photodiodes within a semiconductor substrate having a first surface to which light is incident and a second surface that faces away from the first surface, micro lenses over the first surface of the semiconductor substrate and configured to concentrate the light, color filters between the semiconductor substrate and the micro lenses, and an optical path changing member configured to change a path of at least a portion of the light when the light travels toward the photodiodes through the micro lenses. The optical path changing member having a curved surface being concave or convex on the first surface of the semiconductor substrate.
Claims20
An image sensor, comprising:
- a plurality of pixels arranged in a matrix form;
- photodiodes for respective pixels of the plurality of pixels, the photodiodes within a semiconductor substrate having a first surface to which light is incident and a second surface facing away from the first surface;
- micro lenses over the first surface of the semiconductor substrate and configured to concentrate the light;
- color filters between the semiconductor substrate and the micro lenses;
- and
- an optical path changing member configured to change a path of at least a portion of the light when the light travels toward the photodiodes through the micro lenses,
- wherein the optical path changing member has a curved surface being concave or convex on the first surface of the semiconductor substrate.
An image sensor, comprising:
- a plurality of pixel groups, each of which has one color among first to third colors, wherein each of the plurality of pixel groups includes first to fourth pixels arranged in a 2×2 matrix form;
- photodiodes for the first to fourth pixels, the photodiodes within a semiconductor substrate having a first surface to which light is incident and a second surface facing away from the first surface;
- micro lenses over the first surface of the semiconductor substrate corresponding to the first to fourth pixels and configured to concentrate the light;
- a color filter between the semiconductor substrate and the micro lenses;
- and
- an optical path changing member configured to change a path of at least a portion of the light when the light travels toward the photodiodes through the micro lenses,
- wherein the optical path changing member has a curved surface extending from the first surface of the semiconductor substrate, the curved surface being concave or convex in a direction toward the second surface of the semiconductor substrate.
A method for manufacturing an image sensor, the method comprising:
- providing a semiconductor substrate having a first surface and a second surface facing away from the first surface, the semiconductor substrate including photodiodes and pixel isolators formed therein;
- forming an optical path changing member on a region of the first surface of the semiconductor substrate overlapping the pixel isolators when viewed from above a plane;
- forming a color filter on the semiconductor substrate having the optical path changing member formed thereon;
- and
- forming a micro lens on the semiconductor substrate having the color filter formed thereon,
- wherein the optical path changing member has a curved surface extending from the first surface of the semiconductor substrate, the curved surface being concave or convex in a direction toward the second surface of the semiconductor substrate.
Dependencies are inferred from the claim text.