Thin-film transistor and x-ray sensor

A thin-film transistor to be used in an X-ray sensor, the thin-film transistor comprising:

• a gate electrode;
• a semiconductor layer;
• and
• a gate insulating layer located between the semiconductor layer and the gate electrode,
• wherein the gate insulating layer includes a first region having an interface with the gate electrode and a second region having an interface with the semiconductor layer, and
• wherein each of the first region and the second region has a density of electron trap states substantially equal to a density of hole trap states.

A thin-film transistor to be used in an X-ray sensor, the thin-film transistor comprising:

• a gate electrode;
• a semiconductor layer;
• and
• a gate insulating layer located between the semiconductor layer and the gate electrode,
• wherein the gate insulating layer includes a first region having an interface with the gate electrode, a second region having an interface with the semiconductor layer, and a third region made of a material different from materials of the first region and the second region and located between the first region and the second region, and
• wherein each of the first region and the second region is made of a nitride.