Broadband silicon sensor
AssigneeSRI International
InventorsJohn McCarten, Namwoong Paik
Life of this patent
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Abstract
In general, the disclosure describes sensor including an intermediate band layer including a plurality of dopant particles, wherein the intermediate band layer is configured to absorb a portion of incident electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm and form optically induced minority carriers. The sensor also includes a photo-sensitive silicon substrate configured to detect the electromagnetic radiation comprising a second range of wavelengths less than or equal to 1100 nm.
Claims21
A sensor, comprising:
- an intermediate band layer comprising a plurality of dopant particles, wherein the intermediate band layer is configured to absorb a portion of incident electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm and form optically induced minority carriers;
- and
- a photo-sensitive silicon substrate configured to detect the electromagnetic radiation comprising a second range of wavelengths less than or equal to 1100 nm.
A method of forming a sensor, the method comprising:
- forming an intermediate band layer comprising a plurality of dopant particles on a surface of a photo-sensitive silicon substrate,
- wherein the intermediate band layer is configured to absorb a portion of incident electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm and form optically induced minority carriers.
A method of detecting electromagnetic radiation, the method comprising:
- absorbing, by a silicon sensor comprising an intermediate band layer comprising a plurality of dopant particles, incident electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm, wherein absorbing the incident electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm forms optically induced minority carriers;
- and
- converting, via an n-p junction of the photo-sensitive silicon substrate, a minority carrier optically induced in the intermediate band layer to a carrier in a conduction band or a valence band of the silicon sensor.
Dependencies are inferred from the claim text.