SINGLE PHOTON AVALANCHE DIODE, ELECTRONIC DEVICE, AND LiDAR DEVICE
AssigneeTrupixel Inc.
InventorMyung-Jae LEE
Life of this patent
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Abstract
Disclosed is a single photon avalanche diode comprises a first well having a first conductivity type, a heavily doped region provided on the first well, a guard ring surrounding the heavily doped region, and a second region formed between the first well and the heavily doped region and configured to multiply charge carriers. The heavily doped region and the guard ring have a second conductivity type different from the first conductivity type. The second region extends onto a boundary between a lower portion of the guard ring and the first well.
Claims20
A single photon avalanche diode comprising:
- a first well having a first conductivity type;
- a heavily doped region provided on the first well;
- a guard ring surrounding the heavily doped region;
- and
- a second region formed between the first well and the heavily doped region and configured to multiply charge carriers,
- wherein the heavily doped region and the guard ring have a second conductivity type different from the first conductivity type, and
- wherein the second region extends onto a boundary between a lower portion of the guard ring and the first well.
An electronic device comprising a single photon avalanche diode, wherein the single photon avalanche diode includes:
- a first well having a first conductivity type;
- a heavily doped region provided on the first well;
- a guard ring surrounding the heavily doped region;
- and
- a second region formed between the first well and the heavily doped region and configured to multiply charge carriers,
- wherein the heavily doped region and the guard ring have a second conductivity type different from the first conductivity type, and
- wherein the second region extends onto a boundary between a lower portion of the guard ring and the first well.
A LiDAR device comprising:
- an electronic device including a single photon avalanche diode,
- wherein the single photon avalanche diode includes:
- a first well having a first conductivity type;
- a heavily doped region provided on the first well;
- a guard ring surrounding the heavily doped region;
- and
- a second region formed between the first well and the heavily doped region and configured to multiply charge carriers,
- wherein the heavily doped region and the guard ring have a second conductivity type different from the first conductivity type, and
- wherein the second region extends onto an interface between a lower portion of the guard ring and the first well.
Dependencies are inferred from the claim text.