Photodetector
AssigneeInnoLight Technology (Suzhou) Ltd.
InventorsHao WU, Xuezhe ZHENG
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Abstract
The disclosure provides a photoelectric detector. The photoelectric detector includes a waveguide layer, an absorption layer, and a cladding material. The absorption layer is located on an upper surface of the waveguide layer or at least partially embedded in the waveguide layer. The cladding material covers top portions and side walls of the waveguide layer and the absorption layer. At least one end surface of the photoelectric detector is a light incident surface, and a thickness of an end surface of the absorption layer adjacent to the light incident surface is smaller than a thickness of other portions.
Claims12
A photoelectric detector, comprising:
- a waveguide layer;
- an absorption layer, located on an upper surface of the waveguide layer or at least partially embedded in the waveguide layer;
- and
- a cladding material, covering top portions and side walls of the waveguide layer and the absorption layer,
- wherein at least one end surface of the photoelectric detector is a light incident surface, and a thickness of an end surface of the absorption layer adjacent to the light incident surface is smaller than a thickness of other portions of the absorption layer.
Dependencies are inferred from the claim text.