Semiconductor device with electrostatic discharge protection
AssigneeAvago Technologies International Sales Pte. Limited
InventorQing Liu
Life of this patent
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Abstract
A semiconductor device, such as a fin field-effect transistor (FinFET), that can provide advantages in terms of electrostatic discharge protection. The semiconductor device includes a fin with an undoped region, a first doped region, a second doped region, and a third doped region positioned between the first doped region and the second doped region. The semiconductor device further includes a gate disposed on the undoped region of the fin, a silicide layer disposed on the third doped region, and an interconnect disposed on the silicide layer to form a drain.
Claims20
A semiconductor device, comprising:
- a fin comprising an undoped region, a first doped region, a second doped region, and a third doped region positioned between the first doped region and the second doped region;
- a gate disposed on the undoped region of the fin;
- a silicide layer disposed on the third doped region of the fin;
- and
- an interconnect disposed on the silicide layer to form a drain.
A circuit, comprising:
- a substrate;
- and
- a semiconductor device comprising:
- a fin comprising an undoped region, a first doped region, a second doped region, and a third doped region positioned between the first doped region and the second doped region;
- a gate disposed on the undoped region of the fin;
- a silicide layer disposed on the third doped region;
- and
- an interconnect disposed on the silicide layer to form a drain.
A semiconductor device, comprising:
- a fin comprising an undoped region, a first doped region, a second doped region, a third doped region positioned between the first doped region and the second doped region, and a fourth doped region;
- a gate disposed on the undoped region of the fin;
- a first silicide layer disposed on the third doped region;
- a second silicide layer disposed on the fourth doped region;
- a first interconnect disposed on the first silicide layer to form a drain;
- and
- a second interconnect disposed on the second silicide layer to form a source.
Dependencies are inferred from the claim text.