Semiconductor electronic device comprising an electronic component based on heterostructure and manufacturing process
AssigneeSTMicroelectronics International N.V.
InventorRiccardo DEPETRO
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Abstract
A semiconductor electronic device is formed in a die having a substrate of semiconductor material of a first conductivity type. The device has a first electronic component based on heterostructure, which has a body structure of semiconductor material that extending, in the die, on the substrate, and an epitaxial multilayer extending in contact with the body structure and having a heterostructure. The body structure of the first electronic component has a first doped region of semiconductor material that extends between the heterostructure and the substrate and has a second conductivity type different from the first conductivity type.
Claims20
An electronic device, comprising:
- a die including a substrate of a semiconductor material having a first conductivity type;
- a first electronic component including a body structure of the semiconductor material extending on the substrate and an epitaxial multilayer extending in contact with the body structure and comprising a heterostructure;
- and
- a separation region that extends in the die and surrounds the epitaxial multilayer and is between the epitaxial multilayer and the body structure,
- wherein the body structure of the first electronic component comprises a first doped region of semiconductor material extending between the heterostructure and the substrate and having a second conductivity type different from the first conductivity type.
A process for manufacturing an electronic device, comprising:
- forming, on a wafer including a substrate of semiconductor material having a first conductivity type, a first electronic component,
- wherein the forming the first electronic component includes:
- forming a body structure of semiconductor material on the substrate;
- and
- forming an epitaxial multilayer having a first surface coupled to the body structure and a second surface transverse to the first surface;
- and
- forming a definition region on the body structure and coupled to the second surface of the epitaxial multilayer,
- wherein the body structure comprises a first doped region of semiconductor material extending between the heterostructure and the substrate and having a second conductivity type different from the first conductivity type.
A device, comprising:
- a substrate;
- a body structure on the substrate, the body structure including:
- an epitaxial multilayer having a first face extending along a first direction and a second plurality of faces extending along a second direction transverse to the first direction;
- and
- a first doped region with a first conductivity type;
- a second doped region between the first doped region and the epitaxial multilayer, the second doped region having a second conductivity type different than the first conductivity type;
- a third doped region with the first conductivity type surrounding the second plurality of faces of the epitaxial multilayer.
Dependencies are inferred from the claim text.