Semiconductor device with multiple gates and related method
AssigneeAvago Technologies International Sales Pte. Limited
InventorQing Liu
Life of this patent
Estimating the term…
Abstract
Novel semiconductors and fabrication techniques are provided. In various embodiments, a semiconductor includes a source, a drain, a first gate, a second gate, and a channel. The second gate is electrically coupled to the first gate. The first gate and the second gate are configured to control current between the source and the drain. The channel is in contact with the first gate and the second gate. The channel is configured such that the current flows through the channel. Other aspects, embodiments, and features are also claimed and described.
Claims20
A semiconductor device comprising:
- a source;
- a drain;
- a first gate;
- a second gate, the second gate being electrically coupled to the first gate, the first gate and the second gate positioned between the drain and the source;
- a connector directly positioned on the first gate and the second gate;
- and
- a channel being electrically coupled to the first gate and the second gate.
A method for processing a semiconductor device, comprising:
- forming a first well and a second well on a substrate;
- forming a channel on the first well and the second well;
- forming a first gate and a second gate, the first gate being electrically coupled to the second gate, the channel being electrically coupled to the first gate and the second gate;
- directly positioning a connector on the first gate and the second gate to physically connect the first gate to the second gate;
- and
- forming a source on the first well and a drain on the second well.
A semiconductor device comprising:
- a source,
- a drain;
- a first gate;
- a second gate, the first gate and the second gate positioned between the drain and the source;
- a connector directly positioned on the first gate and the second gate to physically connect the first gate to the second gate;
- and
- a channel being electrically coupled to the first gate and the second gate, the channel being in contact with the second gate.
Dependencies are inferred from the claim text.