Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a first active pattern extending in a first direction;
• a second active pattern on the first active pattern and extending in the first direction;
• a gate structure on the first active pattern and the second active pattern and extending in a second direction intersecting the first direction;
• a first source/drain region on side faces of the gate structure and connected to the first active pattern;
• a second source/drain region on side faces of the gate structure and connected to the second active pattern;
• an intermediate connecting layer interposed between the first active pattern and the second active pattern, and between the first source/drain region and the second source/drain region;
• a first source/drain contact which connects the first source/drain region and the intermediate connecting layer;
• and
• a second source/drain contact which connects the second source/drain region and the intermediate connecting layer.

A semiconductor device comprising:

• a first active pattern extending in a first direction;
• a second active pattern on the first active pattern and extending in the first direction;
• a gate structure on the first active pattern and the second active pattern and extending in a second direction intersecting the first direction;
• a first source/drain region on side faces of the gate structure and connected to the first active pattern;
• a second source/drain region on side faces of the gate structure and connected to the second active pattern;
• an intermediate connecting layer extending in the first direction between the first active pattern and the second active pattern, and between the first source/drain region and the second source/drain region;
• a first insulating pattern interposed between the first active pattern and the intermediate connecting layer;
• a second insulating pattern interposed between the second active pattern and the intermediate connecting layer;
• a first intermediate insulating layer interposed between the first source/drain region and the intermediate connecting layer;
• and
• a second intermediate insulating layer interposed between the second source/drain region and the intermediate connecting layer.